DescriptionElectrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry.Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection.Amply illustrated with tables, figures, and case studies, the text:Instills a deeper understanding of ESD events and ESD protection design principlesExamines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologiesAddresses important aspects pertinent to the modeling and simulation of ESD protection solutionsElectrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.Key FeaturesProvides a single source for cutting-edge information vital to the research and development of effective, robust electrostatic discharge (ESD) protection solutionsBrings together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterizationDelivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuitsBridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protectionIncludes numerous tables, figures, and case studiesTable of ContentsIntroduction to Electrostatic Discharge Protection By Juin J. LiouDesign of Component-Level On-Chip ESD Protection for Integrated Circuits By Charvaka DuvvuryESD and EOS: Failure Mechanisms and Reliability By Nathaniel Peachey and Kevin MelloESD, EOS, and Latch-Up Test Methods and Associated Reliability Concerns By Alan W. RighterDesign of Power-Rail ESD Clamp Circuits with Gate-Leakage Consideration in Nanoscale CMOS Technology By Ming-Dou Ker and Chih-Ting YehESD Protection in Automotive Integrated Circuit Applications By Javier A. Salcedo and Jean-Jacques HajjarESD Sensitivity of GaN-Based Electronic Devices By Gaudenzio Meneghesso, Matteo Meneghini, and Enrico ZanoniESD Protection Circuits Using NMOS Parasitic Bipolar Transistor By Teruo SuzukiESD Development in Foundry Processes By Jim VinsonCompact Modeling of Semiconductor Devices for Electrostatic Discharge Protection Applications By Zhenghao Gan and Waisum WongAdvanced TCAD Methods for System-Level ESD Design By Vladislav A. Vashchenko and Andrei A. ShibkovESD Protection of Failsafe and Voltage-Tolerant Signal Pins By David L. Catlett, Jr., Roger A. Cline, and Ponnarith PokESD Design and Optimization in Advanced CMOS SOI Technology By You LiAuthor DescriptionJuin J. Liou received his BS (honors), MS, and Ph.D in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively. In 1987, he joined the University of Central Florida (UCF), Orlando, where he is now Pegasus distinguished professor, Lockheed Martin St. Laurent professor, and UCF-Analog Devices fellow. Highly decorated and widely published, Dr. Liou holds eight US patents (with five more pending) and several honorary professorships. He is a fellow of IEEE, IET, and Singapore Institute of Manufacturing Technology, and a distinguished lecturer in the IEEE Electron Device Society and National Science Council.